sop8 jiangsu changjiang electronics technology co., l t d sop8 plastic-encapsulate mosfets CJQ4406 n-channel pow e r mosfet description the CJQ4406 uses adv anc ed trench technology to provide excellent r ds(o n) w i t h low gate charge. this device is suitable for high side switch in smps and general purpose applications. ap p lications z high si de s witch in smps z load switch q4406= device co de solid dot=pin1 indicator solid dot = green molding compound device, if none, the normal device front side yy=date code maximum ra tings ( t a =25 unless other wise noted ) paramete r symbol limit unit drain-sourc e voltage v ds 30 v gate-source vo ltag e v gs 20 v continuo us dr ain current i d 10 a pulsed drai n current i dm 40 a single puls ed avalanche energy e as (1) 105 mj pow e r dissipation p d 1.4 w thermal resist ance from jun ction to ambient r ja 89 /w junction t emperature t j 150 storage te mperature r ange t stg -55 ~ + 150 lead t e mperature for soldering purposes(1/8?? from case for 10s) t l 260 (1).e as condition: v dd =50v,l=0.5mh, r g =25 ? , starting t j = 25c g 1 23 4 567 8 s s s dd d d www.cj-elec.com 1 a- 3 , feb ,201 6 marking equivalent circuit v (br) dss r ds(on) max i d 3 0 v ? 12m @ 10v ? 10 a 16m @ 4. 5v ? ?
parameter sy mbol test condition min typ max unit off character istics drain-source b reakdown voltage v (br) dss v gs = 0v, i d =250a 30 v zero gate volt a ge drain current i dss v ds =30v, v gs =0v 1 a gate-body leak age curr ent i gss v ds =0v, v gs =20v 100 na on characteri s tics (note1) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 1.5 3.0 v v gs =10v, i d =12a 7.6 12 m ? static drain-source on-s a te resistance r ds(on ) v gs =4.5v, i d =10a 11 16 m ? for w ard transconductance g fs v ds =5v, i d =10a 15 s dyn a mic characteristics (note 2) input capacitan c e c iss 1550 output capacitance c oss 300 reverse transfer capacitanc e c rss v ds =15v,v gs =0v, f =1mhz 180 pf switch ing characteristics (note 2) total gate char ge q g 13 gate-source charge q gs 5.5 gate-drain charge q gd v ds =15v, v gs =5v, i d =10a 3.5 nc turn-on dela y time t d (on) 30 turn-on rise time t r 20 turn-off delay t ime t d(of f ) 100 turn-off fall time t f v dd =25v,i d =1a, v gs =10v,r g =6 ?, r l =6.7 ? 80 ns gate resistance r g f =1mhz, v ds =0v, v gs =0v, 0.8 2.4 ? drain-so u rce diode characteristics drain-source di ode forward voltage(note1) v sd v gs =0v, i s =10a 1.2 v continuous dra i n-source diode forward current i s 10 a pulsed drai n-s ource diode forward current i sm 40 a notes: 1. pulse t e st : pulse width 300s, duty cycle 2%. 2. guaranteed by design, not su bject to production testing. www.cj-elec.com 2 a-3,feb,2016 mosfet electrical characteristics a t =25 unless otherwise specified
012345 0 2 4 6 8 10 25 50 75 100 125 0.5 1.0 1.5 2.0 0.0 0 .2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 2468 1 0 0 10 20 30 40 50 60 2468 1 0 1 2 0 2 4 6 8 10 12 14 16 18 20 012345 0 2 4 6 8 10 t a =100 v ds =3v pulsed drain current i d (a) gate to source voltage v gs (v) t r an sfer characteristics t a =25 i d =250ua thr e shold voltage thresho ld vo ltage v th (v) junction temperature t j ( ) pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 12 pulsed i d =12a r ds(on) ?? v gs on - resistance r ds( o n) (m ? ) gate to source voltage v gs (v) t a =100 t a =25 v gs =4.5v t a =25 pulsed t a =25 pulsed on - resistance r ds( o n) (m ? ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs = 3v,4v,6v, 8v v gs = 2.8v v gs = 2.5v ou t put characteristics drain current i d (a) drain to source voltage v ds (v) 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 a-3,feb,2016
www.cj-elec.com 4 a-3,feb,2016 sop8 package outline dimensions sop8 suggested pad layout mi n max mi n max a a1 0.100 0.250 0.004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069
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